| رج |
عنوان مقاله |
تاریخ تهیه |
تاریخ ارائه |
عنوان نشریه چاپ شده |
فایل مرتبط |
پیوند مرتبط |
| 1 |
M. Hayati, A. Rezaee, M. Seifi, A. Naderi, “Modeling and Simulation of Combinational CMOS Logic Circuits by ANFIS”, Microelectronics journal, vol. 54, 2010, pp. 52–57. |
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2010 |
Microelectronics journal |
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نمایش پیوند |
| 2 |
A. Naderi, P. Keshavarzi, A. A. Orouji, “LDC-CNTFET: A carbon nanotube field effect transistor with linear doping profile channel”, Superlattices and microstructures, vol. 50, 2011, pp. 145-156. |
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2011 |
Superlattices and Microstructures |
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نمایش پیوند |
| 3 |
A. Naderi, P. Keshavarzi, “Novel carbon nanotube field effect transistor with graded double halo channel”, Superlattices and Microstructures, vol. 51, 2012, pp. 668-679. |
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2012 |
Superlattices and Microstructures |
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نمایش پیوند |
| 4 |
A. Naderi, P. Keshavarzi, “The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors”, Superlattices and Microstructures, Vol. 52, 2012, pp. 962–976. |
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2012 |
Superlattices and Microstructures |
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نمایش پیوند |
| 5 |
A.Naderi, S. Mohammad Noorbakhsh, H. Elahipanah, “Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study”, Journal of Nanomaterials, 2012. |
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2012 |
Journal of nanomaterials |
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نمایش پیوند |
| 6 |
Z. Jamalabadi, P. Keshavarzi, A. Naderi, “SDC–CNTFET: Stepwise Doping Channel design in carbon nanotube field effect transistors for improving short channel Effects immunity”, International journal of modern physics B, Vol. 28, No. 7, 2014. |
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2014 |
International journal of modern physics B |
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نمایش پیوند |
| 7 |
A. Naderi, “Numerical Study of Carbon Nanotube Field Effect Transistors in Presence of Carbon-Carbon Third Nearest Neighbor Interactions”, International journal of modern physics B, Vol. 28, No. 24, 2014. |
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2014 |
International journal of modern physics B |
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نمایش پیوند |
| 8 |
A. Naderi, P. Keshavarzi, Electrically-Activated Source Extension Graphene Nanoribbon Field Effect Transistor: Novel Attributes and Design Considerations for Suppressing Short Channel Effects”,Superlattices and microstructures, 2014. |
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2014 |
Superlattices and microstructures |
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نمایش پیوند |
| 9 |
A. Naderi, Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor, Materials Science in Semiconductor Processing 31, 2015, pp. 223–228. |
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2015 |
Materials Science in Semiconductor Processing |
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نمایش پیوند |
| 10 |
A. Naderi, Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region, Superlattices and microstructures, vol. 89, 2016, pp. 170-178. |
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2016 |
Superlattices and microstructures |
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نمایش پیوند |
| 11 |
A. Naderi, S. Ahmadmiri, Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study, ECS journal of solid state science and technology, Vol. 7, 2016, pp. 63-68. |
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2016 |
journal of solid state science and technology |
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نمایش پیوند |
| 12 |
B. Abdi, A. Naderi, SLD-MOSCNT: A new MOSCNT with Step-Linear Doping profile in the source and drain regions, International Journal of Modern Physics B, Vol. 30, 2016, pp. 1650242. |
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2016 |
International Journal of Modern Physics B |
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نمایش پیوند |
| 13 |
A. Naderi, B. Abdi, T-CNTFET with gate-drain overlap and two different gate metals: a novel structure with increased saturation current, ECS journal of solid state science and technology, Vol. 8, 2016, pp. 3032-3036. |
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2016 |
ECS journal of solid state science and technology |
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نمایش پیوند |
| 14 |
A. Naderi, Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions, Journal of computational electronics, Vol. 15, 2015, pp. 347-357. |
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2015 |
Journal of computational electronics |
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نمایش پیوند |
| 15 |
A. Naderi, B. Abdi, Review-- methods in improving the performance of carbon nanotube field effect transistors, Vol. 5, 2016, pp. 131-140. |
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2016 |
ECS journal of solid state science and technology |
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نمایش پیوند |
| 16 |
A. Naderi, Higher current ratio and improved ambipolar behavior in graphene nanoribbon field effect transistors by symmetric pocket doping profile, ECS journal of solid state science and technology, Vol. 5, 2016, pp. M1-M6. |
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2016 |
ECS journal of solid state science and technology |
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نمایش پیوند |
| 17 |
A Naderi, Improvement in the performance of graphene nanoribbon pin tunneling field effect transistors by applying lightly doped profile on drain region, International Journal of Modern Physics B, 1750248, 2017. |
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2017 |
International Journal of Modern Physics B |
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نمایش پیوند |
| 18 |
H Mohammadi, A Naderi, A Novel SOI-MESFET with Parallel Oxide-Metal Layers for High Voltage and Radio Frequency Applications, AEU-International Journal of Electronics and Communications, 2017. |
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2017 |
AEU-International Journal of Electronics and Communications |
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نمایش پیوند |
| 19 |
A Naderi, B Abdi Tahne, Band bending engineering in pin gate all around Carbon nanotube field effect transistors by multi-segment gate, International Journal of Nano Dimension, 8.4 (2017): 341-350. |
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2017 |
International Journal of Nano Dimension |
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نمایش پیوند |
| 20 |
A Naderi, F Heirani, Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics, Superlattices and Microstructures, 2017. |
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2017 |
Superlattices and Microstructures |
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نمایش پیوند |
| 21 |
A Naderi, M. Ghodrati, Improving band to band tunneling in tunneling carbon nanotube field effect transistorby multi-level development of impurities in drain region, The European Physical Journal Plus, 2017. |
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2017 |
The European Physical Journal Plus |
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نمایش پیوند |
| 22 |
A Naderi, M. Ghodrati, Novel carbon nanotube field effect transistor with lightly doped channel and dual section dielectric, JIAEE, 2018. |
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2018 |
JIAEE |
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نمایش پیوند |
| 23 |
B. Abdi, A. Naderi ,A new tunneling carbon nanotube field effect transistor with linear dopingprofile at drain region: numerical simulation study, Modeling in engineering, 2018. |
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2018 |
Modeling in engineering |
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نمایش پیوند |
| 24 |
Naderi, Ali. "Improvement in the performance of graphene nanoribbon pin tunneling field effect transistors by applying lightly doped profile on drain region." International Journal of Modern Physics B 31.31 (2017): 1750248 |
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2018 |
International Journal of Modern Physics B |
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نمایش پیوند |
| 25 |
Mohammadi, Hamed, and Ali Naderi. "A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications." AEU-International Journal of Electronics and Communications 83 (2018): 541-548. |
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2018 |
AEU-International Journal of Electronics and Communications |
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نمایش پیوند |
| 26 |
Naderi, Ali, and Fatemeh Heirani. "A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide." AEU-International Journal of Electronics and Communications 85 (2018): 91-98. |
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2018 |
AEU-International Journal of Electronics and Communications |
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نمایش پیوند |
| 27 |
Naderi, Ali, and Hamed Mohammadi. "High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high-and low-resistance boxes in the drift region." The European Physical Journal Plus 133.6 (2018): 221. |
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2018 |
The European Physical Journal Plus |
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نمایش پیوند |
| 28 |
Naderi, Ali, and Maryam Ghodrati. "Cut Off Frequency Variation by Ambient Heating in Tunneling pin CNTFETs." ECS Journal of Solid State Science and Technology 7.2 (2018): M6-M10. |
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2018 |
ECS journal of solid state science and technology |
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نمایش پیوند |
| 29 |
Haghiri, S., Zahedi, A., Naderi, A., Ahmadi, A. "Multiplierless Implementation of Noisy Izhikevich Neuron with Low Cost Digital Design." IEEE transactions on biomedical circuits and systems (2018)./ |
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2018 |
IEEE transactions on biomedical circuits and systems |
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نمایش پیوند |
| 30 |
Naderi, Ali, and Maryam Ghodrati. "An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region." |
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2018 |
Turkish journal of electrical and computer sciences |
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نمایش پیوند |
| 31 |
Naderi, Ali, Kamran Moradi Satari, and Fatemeh Heirani. "SOI-MESFET with a layer of metal in buried oxide and a layer of SiO2 in channel to improve RF and breakdown characteristics." Materials Science in Semiconductor Processing 88 (2018): 57-64. |
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2018 |
Materials Science in Semiconductor Processing |
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نمایش پیوند |
| 32 |
Tahne, B. A., Naderi, A., & Heirani, F. "Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX". Silicon, (2019) 1-12 |
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2019 |
Silicon |
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نمایش پیوند |
| 33 |
Zahra Aghaeipour, Ali Naderi, “Embedding two P+ regions in the buried oxide of nano SOI-MOSFETs: controlled short channel effects and electric field”, Silicon, 12, 2020. |
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2020 |
Silicon |
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نمایش پیوند |
| 34 |
Maryam Ghodrati, Ali Mir, Ali Naderi, “New structure of tunneling carbon nanotube FET with electrically junction in part of drain region and step impurity distribution pattern”, AEU-International Journal of Electronics and Communications, 117, 2020. |
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2020 |
AEU-International Journal of Electronics and Communications |
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نمایش پیوند |
| 35 |
Naderi, Ali, and Maryam Ghodrati Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap, Modeling in engineering, 2020, . |
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2020 |
Modeling in engineering |
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نمایش پیوند |
| 36 |
Ali Naderi, Maryam Ghodrati, “Gaussian Doping Distribution in the Channel Region to Improve the Performance of Tunneling Carbon Nanotube Field Effect Transistors”, Journal of computational electronics, 19, 2020. |
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2020 |
Journal of computational electronics |
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نمایش پیوند |
| 37 |
Saeed Haghiri, Ali Naderi, Behzad Ghanbari, Arash Ahmadi, “High Speed and Low Digital Resources Implementation of Hodgkin-Huxley Neuronal Model Using Base-2 Functions”, IEEE Transactions on Circuits and Systems I: Regular Papers, 68, 2021. |
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2020 |
IEEE Transactions on Circuits and Systems I: Regular Papers |
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نمایش پیوند |
| 38 |
M. Ghodrati, A. Mir, A. Naderi, Proposal of a doping-less tunneling carbon nanotube field-effect transistor, Materials Science and Engineering B 265, 115016. 2021. |
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2021 |
Materials Science and Engineering B |
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نمایش پیوند |
| 39 |
S. Khanjar, A. Naderi, DC and RF characteristics improvement in SOI-MESFETs by inserting additional SiO2 layers and symmetric Si wells. Materials Science and Engineering: B, 272, 115386, 2021. |
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2021 |
Materials Science and Engineering: B |
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نمایش پیوند |
| 40 |
A. Naderi, H. Mohammadi, Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance. The European Physical Journal Plus, 136(6), 1-17, 2021. |
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2021 |
The European Physical Journal Plus |
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نمایش پیوند |
| 41 |
M. Ghanbarpour, A. Naderi, S. Haghiri, A. Ahmadi. An Efficient Digital Realization of Retinal Light Adaptation in Cone Photoreceptors. IEEE Transactions on Circuits and Systems I: Regular Papers, 2021. |
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2021 |
IEEE Transactions on Circuits and Systems I: Regular Papers |
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نمایش پیوند |
